Effect of plasma oxidation on pre-oxidized magnetic tunnel junctions

Philip W.T. Pong, Moshe Schmoueli, William F. Egelhoff

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The technique of pre-oxidation of the bottom CoFe electrode prior to deposition of Al2O3 was previously shown to be capable of suppressing intermixing at the ferromagnet/Al interface and removing partial shorts near Al grain boundaries. In this paper, we studied the influence of the plasma oxidation on the pre-oxidized magnetic tunnel junctions (MTJs). In general, the tunneling magnetoresistance (TMR) is independent of the plasma oxidation time whereas the resistance-area product (RA) increases with it. However, for the preoxidized MTJs with very thin Al2O3 (Al thickness < 0.7 nm prior to plasma oxidation), the TMR decreases with plasma oxidation while the RA increases with it.

Original languageEnglish (US)
Pages (from-to)2911-2913
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number11 PART 1
StatePublished - Nov 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


  • Intermixing
  • Magnetic tunnel junction
  • Orange-peel coupling
  • Plasma oxidation
  • Pre-oxidation


Dive into the research topics of 'Effect of plasma oxidation on pre-oxidized magnetic tunnel junctions'. Together they form a unique fingerprint.

Cite this