Effect of post plasma oxidation on Ge gate stacks interface formation

S. Mukhopadhyay; S. Mitra; Y. M. Ding; K. L. Ganapathi; D. Misra; N. Bhat; K. Tapily; R. D. Clark; S. Consiglio; C. S. Wajda; G. J. Leusink

doi:10.1149/07204.0303ecst

Effect of post plasma oxidation on Ge gate stacks interface formation

S. Mukhopadhyay, S. Mitra, Y. M. Ding, K. L. Ganapathi, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO₂/Al₂O₃/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (D_it), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al₂O₃/ZrO₂ gate stack deposition. When SPAO was performed in between Al₂O₃/ZrO₂ deposition, moderate increase in EOT and significant decrease in D_it was observed. This can be attributed to the formation of a thicker GeO_X layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher D_it was observed suggesting a GeO₂ layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al₂O₃/ZrO₂ deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al₂O₃/ZrO₂ gate stacks were exposed to SPAO.

Original language	English (US)
Title of host publication	Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
Editors	F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. De Gendt
Publisher	Electrochemical Society Inc.
Pages	303-312
Number of pages	10
Edition	4
ISBN (Electronic)	9781607687146
DOIs	https://doi.org/10.1149/07204.0303ecst
State	Published - 2016
Event	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States Duration: May 29 2016 → Jun 2 2016

Publication series

Name	ECS Transactions
Number	4
Volume	72
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Country/Territory	United States
City	San Diego
Period	5/29/16 → 6/2/16

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/07204.0303ecst

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Mukhopadhyay, S., Mitra, S., Ding, Y. M., Ganapathi, K. L., Misra, D., Bhat, N., Tapily, K., Clark, R. D., Consiglio, S., Wajda, C. S., & Leusink, G. J. (2016). Effect of post plasma oxidation on Ge gate stacks interface formation. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, & S. De Gendt (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., pp. 303-312). (ECS Transactions; Vol. 72, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0303ecst

Mukhopadhyay, S. ; Mitra, S. ; Ding, Y. M. et al. / Effect of post plasma oxidation on Ge gate stacks interface formation. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. editor / F. Roozeboom ; V. Narayanan ; K. Kakushima ; P. J. Timans ; E. P. Gusev ; Z. Karim ; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. pp. 303-312 (ECS Transactions; 4).

@inproceedings{97df1d57b9da4112864d24b57e6b92e8,

title = "Effect of post plasma oxidation on Ge gate stacks interface formation",

abstract = "This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.",

author = "S. Mukhopadhyay and S. Mitra and Ding, {Y. M.} and Ganapathi, {K. L.} and D. Misra and N. Bhat and K. Tapily and Clark, {R. D.} and S. Consiglio and Wajda, {C. S.} and Leusink, {G. J.}",

note = "Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",

year = "2016",

doi = "10.1149/07204.0303ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "303--312",

editor = "F. Roozeboom and V. Narayanan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and {De Gendt}, S.",

booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6",

edition = "4",

}

Mukhopadhyay, S, Mitra, S, Ding, YM, Ganapathi, KL, Misra, D, Bhat, N, Tapily, K, Clark, RD, Consiglio, S, Wajda, CS & Leusink, GJ 2016, Effect of post plasma oxidation on Ge gate stacks interface formation. in F Roozeboom, V Narayanan, K Kakushima, PJ Timans, EP Gusev, Z Karim & S De Gendt (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 edn, ECS Transactions, no. 4, vol. 72, Electrochemical Society Inc., pp. 303-312, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting, San Diego, United States, 5/29/16. https://doi.org/10.1149/07204.0303ecst

Effect of post plasma oxidation on Ge gate stacks interface formation. / Mukhopadhyay, S.; Mitra, S.; Ding, Y. M. et al.
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. ed. / F. Roozeboom; V. Narayanan; K. Kakushima; P. J. Timans; E. P. Gusev; Z. Karim; S. De Gendt. 4. ed. Electrochemical Society Inc., 2016. p. 303-312 (ECS Transactions; Vol. 72, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effect of post plasma oxidation on Ge gate stacks interface formation

AU - Mukhopadhyay, S.

AU - Mitra, S.

AU - Ding, Y. M.

AU - Ganapathi, K. L.

AU - Misra, D.

AU - Bhat, N.

AU - Tapily, K.

AU - Clark, R. D.

AU - Consiglio, S.

AU - Wajda, C. S.

AU - Leusink, G. J.

N1 - Publisher Copyright: ©The Electrochemical Society.

PY - 2016

Y1 - 2016

N2 - This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.

AB - This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.

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BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

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ER -

Mukhopadhyay S, Mitra S, Ding YM, Ganapathi KL, Misra D, Bhat N et al. Effect of post plasma oxidation on Ge gate stacks interface formation. In Roozeboom F, Narayanan V, Kakushima K, Timans PJ, Gusev EP, Karim Z, De Gendt S, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6. 4 ed. Electrochemical Society Inc. 2016. p. 303-312. (ECS Transactions; 4). doi: 10.1149/07204.0303ecst

Effect of post plasma oxidation on Ge gate stacks interface formation

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