This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.