Effect of post plasma oxidation on Ge gate stacks interface formation

S. Mukhopadhyay, S. Mitra, Y. M. Ding, K. L. Ganapathi, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
EditorsK. Kakushima, F. Roozeboom, P. J. Timans, S. De Gendt, Z. Karim, E. P. Gusev, V. Narayanan
PublisherElectrochemical Society Inc.
Pages303-312
Number of pages10
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2016
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number4
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period5/29/166/2/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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