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Effect of post plasma oxidation on Ge gate stacks interface formation
S. Mukhopadhyay
,
S. Mitra
, Y. M. Ding
, K. L. Ganapathi
,
D. Misra
, N. Bhat
, K. Tapily
, R. D. Clark
, S. Consiglio
, C. S. Wajda
, G. J. Leusink
Chemistry and Environmental Science
Otto H. York Center for Environmental Engineering and Science
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
9
Scopus citations
Overview
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Keyphrases
Interface Formation
100%
Gate Stack
100%
Plasma Oxidation
100%
Antenna
85%
Al2O3-ZrO2
57%
Dielectric
28%
Breakdown Characteristics
28%
Plasma Exposure
28%
Equivalent Oxide Thickness
28%
Electrical Properties
14%
High Density
14%
Dielectric Breakdown
14%
Leakage Current
14%
Interface Quality
14%
ZrO2-Al2O3
14%
GeO2
14%
Interface State Density
14%
Dielectric Deposition
14%
Layer Formation
14%
Film Densification
14%
C-V Hysteresis
14%
Oxide Breakdown
14%
Ge MOS Capacitor
14%
ALD Al2O3
14%
Material Science
Oxidation Reaction
100%
Zirconia
71%
Al2O3
71%
Dielectric Material
42%
Density
42%
Oxide Compound
42%
Film
14%
Capacitor
14%
Electrical Breakdown
14%