Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors

D. Misra; C. R. Selvakumar; E. L. Heasell; D. J. Roulston

doi:10.1016/0038-1101(88)90014-7

Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors

D. Misra, C. R. Selvakumar, E. L. Heasell, D. J. Roulston

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	1647-1649
Number of pages	3
Journal	Solid State Electronics
Volume	31
Issue number	11
DOIs	https://doi.org/10.1016/0038-1101(88)90014-7
State	Published - Nov 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(88)90014-7

Cite this

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title = "Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors",

author = "D. Misra and Selvakumar, {C. R.} and Heasell, {E. L.} and Roulston, {D. J.}",

year = "1988",

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doi = "10.1016/0038-1101(88)90014-7",

language = "English (US)",

volume = "31",

pages = "1647--1649",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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AU - Misra, D.

AU - Selvakumar, C. R.

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AU - Roulston, D. J.

PY - 1988/11

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VL - 31

SP - 1647

EP - 1649

JO - Solid State Electronics

JF - Solid State Electronics

IS - 11

ER -

Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors

All Science Journal Classification (ASJC) codes

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