Effect of sputtered TiW deposition conditions on barrier properties for submicron metallization

G. E. Georgiou, M. Baker, S. A. Eshraghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the results of an orthogonal array study of the step coverage of magnetron sputtered TiW. We concentrate on the effect of target power (l-2.5kW), Ar pressure (4-2lmT), and substrate temperature (100-450°C) on coverage into near vertical wall windows (85° wall angle) with aspect ratio -1.5 (h/w=l.3/0.85) reactive ion etched in a deposited oxide. Scanning electron microscopy (SEM) indicates that coverage defined as the ratio of TiW -1000A thick on top of oxide to that in the bottom of the windows, varies between -25-35%. Coverage improves with moderate power ~2kW and temperature ~300°C. Ar pressure has a somewhat smaller effect on coverage than either power or temperature. TiW resistivity and stress magnitude also decrease to 0.65-0.7μΩ-cm and low 109 dynes/cm2 respectively, for the sputtering conditions used to maximize step coverage. Reverse bias diode leakage (-3000Å deep n+/p with -1000Å TiSi2 and window contacts) does not degrade for Al/TiW or Al/CVD W/TiW metallization of the window contacts are annealed at 450oC,30min., the highest anneal cycle used in this study. Low leakage was measured for a nominal 1000Å thick TiW deposited with the conditions giving the best and worst window coverage, indicating that -300Å is an acceptable barrier at ≤450°C.

Original languageEnglish (US)
Title of host publication1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages420-422
Number of pages3
ISBN (Electronic)087942673X, 9780879426736
DOIs
StatePublished - Jan 1 1991
Event8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991 - Santa Clara, United States
Duration: Jun 11 1991Jun 12 1991

Publication series

Name1991 Proceedings 8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991

Conference

Conference8th International IEEE VLSI Multilevel Interconnection Conference, VMIC 1991
CountryUnited States
CitySanta Clara
Period6/11/916/12/91

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Fingerprint Dive into the research topics of 'Effect of sputtered TiW deposition conditions on barrier properties for submicron metallization'. Together they form a unique fingerprint.

Cite this