Abstract
The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.
Original language | English (US) |
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Pages (from-to) | 465-468 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 42 |
Issue number | 6 |
DOIs | |
State | Published - May 1982 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry