The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - May 1982|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry