Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge

F. A. Sarott, Z. Iqbal, S. Vepřek

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.

Original languageEnglish (US)
Pages (from-to)465-468
Number of pages4
JournalSolid State Communications
Volume42
Issue number6
DOIs
StatePublished - May 1982

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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