Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge

F. A. Sarott; Z. Iqbal; S. Vepřek

doi:10.1016/0038-1098(82)90974-7

Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge

F. A. Sarott
, Z. Iqbal
, S. Vepřek

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.

Original language	English (US)
Pages (from-to)	465-468
Number of pages	4
Journal	Solid State Communications
Volume	42
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(82)90974-7
State	Published - May 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(82)90974-7

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@article{23f31419389f44ed8087efb1fde22b3a,

title = "Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge",

abstract = "The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.",

author = "Sarott, \{F. A.\} and Z. Iqbal and S. Vep{\v r}ek",

note = "Funding Information: Acknowledgements - We would like to thank Prof. P. Wachter for permission to use the Raman instrumentation in his laboratory at the ETH-Ziirich. This work has been supported in part by the Nationaler Energie Forschungsfonds and the Schweizerischer Nationalfonds zur F6rderung Wissenschafflicher Forschung.",

year = "1982",

month = may,

doi = "10.1016/0038-1098(82)90974-7",

language = "English (US)",

volume = "42",

pages = "465--468",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "6",

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TY - JOUR

T1 - Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge

AU - Sarott, F. A.

AU - Iqbal, Z.

AU - Vepřek, S.

N1 - Funding Information: Acknowledgements - We would like to thank Prof. P. Wachter for permission to use the Raman instrumentation in his laboratory at the ETH-Ziirich. This work has been supported in part by the Nationaler Energie Forschungsfonds and the Schweizerischer Nationalfonds zur F6rderung Wissenschafflicher Forschung.

PY - 1982/5

Y1 - 1982/5

N2 - The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.

AB - The effect of negative bias of the substrate varying between 0 and -950 V, on the crystallite size, lattice expansion and Raman spectra of hydrogenated microcrystalline silicon films, is reported. At a bias of -850 ± 30 V and a substrate temperature of 260°C, a discontinuous crystalline-to-amorphous transition is found.

UR - https://www.scopus.com/pages/publications/0020125541

UR - https://www.scopus.com/pages/publications/0020125541#tab=citedBy

U2 - 10.1016/0038-1098(82)90974-7

DO - 10.1016/0038-1098(82)90974-7

M3 - Article

AN - SCOPUS:0020125541

SN - 0038-1098

VL - 42

SP - 465

EP - 468

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow discharge

Abstract

All Science Journal Classification (ASJC) codes

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