Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

Sudhakar Shet, Kwang Soon Ahn, Heli Wang, Ravindra Nuggehalli, Yanfa Yan, John Turner, Mowafak Al-Jassim

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.

Original languageEnglish (US)
Pages (from-to)5218-5222
Number of pages5
JournalJournal of Materials Science
Volume45
Issue number19
DOIs
StatePublished - Oct 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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