TY - JOUR
T1 - Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films
AU - Shet, Sudhakar
AU - Ahn, Kwang Soon
AU - Wang, Heli
AU - Nuggehalli, Ravindra
AU - Yan, Yanfa
AU - Turner, John
AU - Al-Jassim, Mowafak
N1 - Funding Information:
Acknowledgements We thank Glenn Teeter for XPS measurements. This work was supported by the U.S. Department of Energy under contract # DE-AC36-08GO28308.
PY - 2010/10
Y1 - 2010/10
N2 - Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.
AB - Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.
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U2 - 10.1007/s10853-010-4561-x
DO - 10.1007/s10853-010-4561-x
M3 - Article
AN - SCOPUS:77955473423
SN - 0022-2461
VL - 45
SP - 5218
EP - 5222
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 19
ER -