Effect of Ge surface nitridation, prior to HfO 2 deposition, on Ge/HfO 2 interface has been studied using low temperature measurements. C-V characteristics at room temperature show significant dispersion in nitrided devices compared to non-nitrided devices as a function of frequency. Electron trapping is found to be dominant as temperature was reduced to 140K. Estimated activation energies in nitrided and non-nitrided devices indicate that surface nitridation is introducing new trap levels in bulk oxide. Constant voltage stress shows hole trapping being dominant in non-nitrided devices. In nitrided devices, effect of both hole and electron trapping is observed at higher stress level and higher charge injection. copyright The Electrochemical Society.
|Original language||English (US)|
|Number of pages||10|
|State||Published - Dec 1 2005|
|Event||3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
All Science Journal Classification (ASJC) codes