Effect of surface nitridation on the Ge/HfO 2 interface

R. Garg, Durgamadhab Misra, S. Guha

Research output: Contribution to journalConference articlepeer-review


Effect of Ge surface nitridation, prior to HfO 2 deposition, on Ge/HfO 2 interface has been studied using low temperature measurements. C-V characteristics at room temperature show significant dispersion in nitrided devices compared to non-nitrided devices as a function of frequency. Electron trapping is found to be dominant as temperature was reduced to 140K. Estimated activation energies in nitrided and non-nitrided devices indicate that surface nitridation is introducing new trap levels in bulk oxide. Constant voltage stress shows hole trapping being dominant in non-nitrided devices. In nitrided devices, effect of both hole and electron trapping is observed at higher stress level and higher charge injection. copyright The Electrochemical Society.

Original languageEnglish (US)
Pages (from-to)17-26
Number of pages10
JournalECS Transactions
Issue number5
StatePublished - Dec 1 2005
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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