@inproceedings{bb08e2cd9cfa4bd7b6818640121b30c0,
title = "Effect of surface nitridation on the Ge/HfO2 interface",
abstract = "Effect of Ge surface nitridation, prior to HfO2 deposition, on Ge/HfO2 interface has been studied using low temperature measurements. C-V characteristics at room temperature show significant dispersion in nitrided devices compared to non-nitrided devices as a function of frequency. Electron trapping is found to be dominant as temperature was reduced to 140K. Estimated activation energies in nitrided and non-nitrided devices indicate that surface nitridation is introducing new trap levels in bulk oxide. Constant voltage stress shows hole trapping being dominant in non-nitrided devices. In nitrided devices, effect of both hole and electron trapping is observed at higher stress level and higher charge injection. copyright The Electrochemical Society.",
author = "R. Garg and D. Misra and S. Guha",
year = "2006",
doi = "10.1149/1.2209251",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "17--26",
booktitle = "Physics and Technology of High-k Gate Dielectrics III",
edition = "5",
note = "3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",
}