Effect of surface nitridation on the Ge/HfO2 interface

R. Garg, D. Misra, S. Guha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effect of Ge surface nitridation, prior to HfO2 deposition, on Ge/HfO2 interface has been studied using low temperature measurements. C-V characteristics at room temperature show significant dispersion in nitrided devices compared to non-nitrided devices as a function of frequency. Electron trapping is found to be dominant as temperature was reduced to 140K. Estimated activation energies in nitrided and non-nitrided devices indicate that surface nitridation is introducing new trap levels in bulk oxide. Constant voltage stress shows hole trapping being dominant in non-nitrided devices. In nitrided devices, effect of both hole and electron trapping is observed at higher stress level and higher charge injection. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages17-26
Number of pages10
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2006
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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