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Effect of surface nitridation on the Ge/HfO
2
interface
R. Garg
,
D. Misra
, S. Guha
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
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2
interface'. Together they form a unique fingerprint.
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Engineering
Activation Energy
100%
Charge Injection
100%
Constant Voltage
100%
Ge Surface
100%
Low-Temperature
100%
Room Temperature
100%
Stress Level
100%
Keyphrases
Activation Energy
16%
Bulk Oxides
16%
C-V Characteristics
16%
Charge Injection
16%
Constant Voltage Stress
16%
Copyright
16%
Device Effects
16%
Electron Traps
33%
Ge Surface
16%
HfO2
100%
High Charge
16%
High Stress
16%
Hole Trapping
33%
Low Temperature Measurements
16%
Nitrides
100%
Room Temperature
16%
Surface Nitridation
100%
Trap Level
16%
Material Science
Activation Energy
33%
Nitriding
100%
Oxide Compound
33%