Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga₂O₃ nano-HEMT

In this article, a field-plated and recessed gate III-Nitride Nano-HEMT developed on β-Ga₂O₃ substrate is proposed and investigated for various performance characteristics over different temperatures. The 2DEG (Two Dimensional Electron Gas) dependence on temperature is critical for commercial utilization of GaN-based HEMTs (high electron mobility transistors). Here, the temperature influence on 2DEG for proposed HEMT over the range of 300–400 K has been investigated. The results demonstrate that the 2DEG density of proposed HEMT reduces as temperature increases. It has been observed that phonon scattering results in a sharp decline in the mobility of 2DEG as temperature increases, which causes the electric field to decrease. It also exhibited that the cut-off frequency decreased over the temperature changes from 300 to 400 K due to diminution in electron mobility. This research aims to contribute an extensive overview of proposed III-Nitride Nano-HEMT designed on a lattice-matched substrate of β-Ga₂O₃ to foster future research on the latest developments in this field.