Effect of varying the gate voltage scan rate in a MoS2/ferroelectric polymer field effect transistor

Nicholas J. Pinto, Luis M. Rijos, Meng Qiang Zhao, William M. Parkin, A. T.Charlie Johnson

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A ferroelectric FET using MoS2 and PVDF-TrFE was fabricated, and the effects of varying the gate voltage scan rate from 200 mV/s to 4 mV/s investigated. Charge mobility, sub-threshold voltage swing and the memory window width depended on the scan rate. Prior to switching on, a negative trans-conductance was observed for all scan rates, followed by a rapid increase in the channel current to the on state. A model based on nucleation of ferroelectric domains and unrestricted domain growth was used to explain these results. By lowering the scan rate, the performance of polymer based FE-FET’s can be improved.

Original languageEnglish (US)
Pages (from-to)1-11
Number of pages11
JournalFerroelectrics
Volume550
Issue number1
DOIs
StatePublished - Oct 3 2019
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • FE-FET
  • MoS2
  • PVDF-TrFE
  • gate scan

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