Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials

O. H. Gokce; S. Amin; N. M. Ravindra; D. J. Szostak; R. J. Paff; J. G. Fleming; C. J. Galewski; J. Shallenberger; R. Eby

doi:10.1016/S0040-6090(99)00424-1

Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials

O. H. Gokce, S. Amin, N. M. Ravindra, D. J. Szostak, R. J. Paff, J. G. Fleming, C. J. Galewski, J. Shallenberger, R. Eby

Physics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO₂/Si structures have been investigated. Enhanced amount of nitrogen loss from the barrier films with increased annealing temperatures has been observed. Spectral emissometry has been employed as a novel tool to study the changes in the optical properties of the W-Si-N films in the infrared region. Annealing the structures at 800°C has resulted in a significant increase in surface reflectance along with a decrease in transmittance, while that at 450°C has resulted in a relatively small decrease in both reflectance and transmittance. All of the annealing conditions have led to reduced film resistivity. It is postulated that nitrogen occupies two different interstitial sites in the micro/nanocrystallites of as-deposited W-Si-N structure and leaves these sites upon annealing at high temperatures. Majority of the N atoms or molecules in the annealed W-Si-N films are assigned to the grain boundaries.

Original language	English (US)
Pages (from-to)	149-156
Number of pages	8
Journal	Thin Solid Films
Volume	353
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00424-1
State	Published - Sep 29 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(99)00424-1

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@article{37f95817bb7245f28decca959c6aa703,

title = "Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials",

abstract = "The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO2/Si structures have been investigated. Enhanced amount of nitrogen loss from the barrier films with increased annealing temperatures has been observed. Spectral emissometry has been employed as a novel tool to study the changes in the optical properties of the W-Si-N films in the infrared region. Annealing the structures at 800°C has resulted in a significant increase in surface reflectance along with a decrease in transmittance, while that at 450°C has resulted in a relatively small decrease in both reflectance and transmittance. All of the annealing conditions have led to reduced film resistivity. It is postulated that nitrogen occupies two different interstitial sites in the micro/nanocrystallites of as-deposited W-Si-N structure and leaves these sites upon annealing at high temperatures. Majority of the N atoms or molecules in the annealed W-Si-N films are assigned to the grain boundaries.",

author = "Gokce, {O. H.} and S. Amin and Ravindra, {N. M.} and Szostak, {D. J.} and Paff, {R. J.} and Fleming, {J. G.} and Galewski, {C. J.} and J. Shallenberger and R. Eby",

note = "Funding Information: This work was partially supported by grants from the New Jersey Space Grant Consortium contract number NJSGC-96-24, the New Jersey Commission on Science and Technology, SEMATECH contract number 360220900, and DARPA(TRP) contract number DAAH04-94-0041. The authors would like to thank F.M. Tong and S. Abedrabbo for helpful discussions, V. Sigal, A. Patel and V. Rajasekhar for their assistance with the measurements, and a reviewer for the helpful comments on the manuscript.",

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doi = "10.1016/S0040-6090(99)00424-1",

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T1 - Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials

AU - Gokce, O. H.

AU - Amin, S.

AU - Ravindra, N. M.

AU - Szostak, D. J.

AU - Paff, R. J.

AU - Fleming, J. G.

AU - Galewski, C. J.

AU - Shallenberger, J.

AU - Eby, R.

N1 - Funding Information: This work was partially supported by grants from the New Jersey Space Grant Consortium contract number NJSGC-96-24, the New Jersey Commission on Science and Technology, SEMATECH contract number 360220900, and DARPA(TRP) contract number DAAH04-94-0041. The authors would like to thank F.M. Tong and S. Abedrabbo for helpful discussions, V. Sigal, A. Patel and V. Rajasekhar for their assistance with the measurements, and a reviewer for the helpful comments on the manuscript.

PY - 1999/9/29

Y1 - 1999/9/29

N2 - The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO2/Si structures have been investigated. Enhanced amount of nitrogen loss from the barrier films with increased annealing temperatures has been observed. Spectral emissometry has been employed as a novel tool to study the changes in the optical properties of the W-Si-N films in the infrared region. Annealing the structures at 800°C has resulted in a significant increase in surface reflectance along with a decrease in transmittance, while that at 450°C has resulted in a relatively small decrease in both reflectance and transmittance. All of the annealing conditions have led to reduced film resistivity. It is postulated that nitrogen occupies two different interstitial sites in the micro/nanocrystallites of as-deposited W-Si-N structure and leaves these sites upon annealing at high temperatures. Majority of the N atoms or molecules in the annealed W-Si-N films are assigned to the grain boundaries.

AB - The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO2/Si structures have been investigated. Enhanced amount of nitrogen loss from the barrier films with increased annealing temperatures has been observed. Spectral emissometry has been employed as a novel tool to study the changes in the optical properties of the W-Si-N films in the infrared region. Annealing the structures at 800°C has resulted in a significant increase in surface reflectance along with a decrease in transmittance, while that at 450°C has resulted in a relatively small decrease in both reflectance and transmittance. All of the annealing conditions have led to reduced film resistivity. It is postulated that nitrogen occupies two different interstitial sites in the micro/nanocrystallites of as-deposited W-Si-N structure and leaves these sites upon annealing at high temperatures. Majority of the N atoms or molecules in the annealed W-Si-N films are assigned to the grain boundaries.

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Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials

Abstract

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