Effects of defects in GaAs/AlGaAs quantum wells

O. L. Russo, V. Rehn, T. W. Nee, K. A. Dumas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High Resolution transmission electron microscopy (HRTEM) and electroreflectance (ER) were used to explain the role of point defects in the molecular beam epitaxy (MBE) grown PIN structure containing five coupled (50 angstroms/28 angstroms) GaAs/AlxGa1-xAs quantum wells with x = 0.25. The ER data were taken at 300 K and 77 K for energies from 1.4 to 2.1 eV from which sub-band energy transitions were determined. Data at 300 K showed three transitions whereas four were readily resolved at 77 K. HRTEM data determined the uniformity of both the wells and barriers to be within ±2 angstroms, which neither caused appreciable broadening nor a decrease in the transition probability. However, the data at different temperatures suggest that point defects may be responsible for the decrease in the transition probability.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages43-48
Number of pages6
ISBN (Print)1558992243
StatePublished - Jan 1 1994
EventProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications - Boston, MA, USA
Duration: Nov 29 1993Dec 1 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume325
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Defects in Advanced Semiconductors: Physics and Applications
CityBoston, MA, USA
Period11/29/9312/1/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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