Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering

Hong Cao; Jun Hao Chu; Shan Li Wang; Yun Hua Wu; Chuan Jun Zhang

doi:10.3724/SP.J.1010.2013.00097

Effects of deposition parameters on Cd_1-xZn_xTe films prepared by RF magnetron sputtering

Hong Cao, Jun Hao Chu, Shan Li Wang, Yun Hua Wu, Chuan Jun Zhang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Cd_1-xZn_xTe films were deposited by RF magnetron sputtering from Cd_0.96Zn_0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

Original language	English (US)
Pages (from-to)	97-101
Number of pages	5
Journal	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume	32
Issue number	2
DOIs	https://doi.org/10.3724/SP.J.1010.2013.00097
State	Published - Apr 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

Keywords

Band gap
CdZnTe
RF magnetron sputtering
Thin films

Access to Document

10.3724/SP.J.1010.2013.00097

Cite this

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title = "Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering",

abstract = "Cd1-xZnxTe films were deposited by RF magnetron sputtering from Cd0.96Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.",

keywords = "Band gap, CdZnTe, RF magnetron sputtering, Thin films",

author = "Hong Cao and Chu, {Jun Hao} and Wang, {Shan Li} and Wu, {Yun Hua} and Zhang, {Chuan Jun}",

year = "2013",

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doi = "10.3724/SP.J.1010.2013.00097",

language = "English (US)",

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T1 - Effects of deposition parameters on Cd1-xZnxTe films prepared by RF magnetron sputtering

AU - Cao, Hong

AU - Chu, Jun Hao

AU - Wang, Shan Li

AU - Wu, Yun Hua

AU - Zhang, Chuan Jun

PY - 2013/4

Y1 - 2013/4

N2 - Cd1-xZnxTe films were deposited by RF magnetron sputtering from Cd0.96Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

AB - Cd1-xZnxTe films were deposited by RF magnetron sputtering from Cd0.96Zn0.04Te crystals target at different substrate temperatures, RF powers and working pressures. After deposition, the samples were annealed in high purity air at 473 K. The films were characterized using step profilometer, UV-VIS-NIR spectrophotometer, XRD and SEM. Depending on the deposition parameters and annealing, the values of the band gap of the CZT films varied between 1.45 and 2.02 eV.

KW - Band gap

KW - CdZnTe

KW - RF magnetron sputtering

KW - Thin films

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