TY - GEN

T1 - Effects of electron radiation on the optical constants of p-type silicon

AU - Russo, Onofrio L.

AU - Dumas, Katherine A.

PY - 1993

Y1 - 1993

N2 - The optical constants n and k are determined for p-type silicon at the E0 and E1 and critical point energies for one MeV electron irradiated samples. The value for fluences of 1014 and 1016 e-/cm2 are compared to samples before irradiation. The real, ε1, and imaginary, ε2, components of the dielectric function, ε, used to find n and k, were obtained by measurement of tanψ and δ using spectroscopic ellipsometry (SE). The data show that changes in δ, in particular, are greater in the region about E0 than of E1. This is consistent with electrolyte electroreflectance (EER) results in which the Lorentz line shape is narrower for E0 than for E1. The value of n is found to increase and k to decrease with e- radiation at the critical points, although, neither does so monotonically. The change in n at the E0 critical point is greater than at the higher energy main structure E1 whereas, k is a slower varying function in this region.

AB - The optical constants n and k are determined for p-type silicon at the E0 and E1 and critical point energies for one MeV electron irradiated samples. The value for fluences of 1014 and 1016 e-/cm2 are compared to samples before irradiation. The real, ε1, and imaginary, ε2, components of the dielectric function, ε, used to find n and k, were obtained by measurement of tanψ and δ using spectroscopic ellipsometry (SE). The data show that changes in δ, in particular, are greater in the region about E0 than of E1. This is consistent with electrolyte electroreflectance (EER) results in which the Lorentz line shape is narrower for E0 than for E1. The value of n is found to increase and k to decrease with e- radiation at the critical points, although, neither does so monotonically. The change in n at the E0 critical point is greater than at the higher energy main structure E1 whereas, k is a slower varying function in this region.

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U2 - 10.1557/proc-302-591

DO - 10.1557/proc-302-591

M3 - Conference contribution

AN - SCOPUS:0027192562

SN - 1558992073

SN - 9781558992078

T3 - Materials Research Society Symposium Proceedings

SP - 591

EP - 596

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Proceedings of the First Symposium on Semiconductors for Room-Temperature Radiation Detector Applications

Y2 - 12 April 1993 through 16 April 1993

ER -