Effects of electron radiation on the optical constants of p-type silicon

Onofrio L. Russo, Katherine A. Dumas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The optical constants n and k are determined for p-type silicon at the E0 and E1 and critical point energies for one MeV electron irradiated samples. The value for fluences of 1014 and 1016 e-/cm2 are compared to samples before irradiation. The real, ε1, and imaginary, ε2, components of the dielectric function, ε, used to find n and k, were obtained by measurement of tanψ and δ using spectroscopic ellipsometry (SE). The data show that changes in δ, in particular, are greater in the region about E0 than of E1. This is consistent with electrolyte electroreflectance (EER) results in which the Lorentz line shape is narrower for E0 than for E1. The value of n is found to increase and k to decrease with e- radiation at the critical points, although, neither does so monotonically. The change in n at the E0 critical point is greater than at the higher energy main structure E1 whereas, k is a slower varying function in this region.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages591-596
Number of pages6
ISBN (Print)1558992073, 9781558992078
DOIs
StatePublished - 1993
EventProceedings of the First Symposium on Semiconductors for Room-Temperature Radiation Detector Applications - San Francisco, CA, USA
Duration: Apr 12 1993Apr 16 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume302
ISSN (Print)0272-9172

Other

OtherProceedings of the First Symposium on Semiconductors for Room-Temperature Radiation Detector Applications
CitySan Francisco, CA, USA
Period4/12/934/16/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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