Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

A. E. Delahoy; R. W. Griffith; F. J. Kampas; P. E. Vanier

doi:10.1007/BF02658902

Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

A. E. Delahoy, R. W. Griffith, F. J. Kampas, P. E. Vanier

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Concentrations of monochlorosilane (SiH₃Cl) of the order of 2500 ppm have been detected in some commercial tanks of silane by mass spectrometry and optical emission spectroscopy (OES). This impurity is shown to depress the position of the Fermi level in a-Si:H, resulting in lower photoconductivity and solar cell efficiency.

Original language	English (US)
Pages (from-to)	869-882
Number of pages	14
Journal	Journal of Electronic Materials
Volume	11
Issue number	5
DOIs	https://doi.org/10.1007/BF02658902
State	Published - Sep 1982
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Amorphous silicon
mass spectrometry
monochlorosilane
optical emission spectroscopy
photoconductivity
solar cells

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10.1007/BF02658902

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title = "Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon",

abstract = "Concentrations of monochlorosilane (SiH3Cl) of the order of 2500 ppm have been detected in some commercial tanks of silane by mass spectrometry and optical emission spectroscopy (OES). This impurity is shown to depress the position of the Fermi level in a-Si:H, resulting in lower photoconductivity and solar cell efficiency.",

keywords = "Amorphous silicon, mass spectrometry, monochlorosilane, optical emission spectroscopy, photoconductivity, solar cells",

author = "Delahoy, {A. E.} and Griffith, {R. W.} and Kampas, {F. J.} and Vanier, {P. E.}",

year = "1982",

month = sep,

doi = "10.1007/BF02658902",

language = "English (US)",

volume = "11",

pages = "869--882",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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T1 - Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

AU - Delahoy, A. E.

AU - Griffith, R. W.

AU - Kampas, F. J.

AU - Vanier, P. E.

PY - 1982/9

Y1 - 1982/9

N2 - Concentrations of monochlorosilane (SiH3Cl) of the order of 2500 ppm have been detected in some commercial tanks of silane by mass spectrometry and optical emission spectroscopy (OES). This impurity is shown to depress the position of the Fermi level in a-Si:H, resulting in lower photoconductivity and solar cell efficiency.

AB - Concentrations of monochlorosilane (SiH3Cl) of the order of 2500 ppm have been detected in some commercial tanks of silane by mass spectrometry and optical emission spectroscopy (OES). This impurity is shown to depress the position of the Fermi level in a-Si:H, resulting in lower photoconductivity and solar cell efficiency.

KW - Amorphous silicon

KW - mass spectrometry

KW - monochlorosilane

KW - optical emission spectroscopy

KW - photoconductivity

KW - solar cells

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U2 - 10.1007/BF02658902

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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