Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

A. E. Delahoy, R. W. Griffith, F. J. Kampas, P. E. Vanier

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Concentrations of monochlorosilane (SiH3Cl) of the order of 2500 ppm have been detected in some commercial tanks of silane by mass spectrometry and optical emission spectroscopy (OES). This impurity is shown to depress the position of the Fermi level in a-Si:H, resulting in lower photoconductivity and solar cell efficiency.

Original languageEnglish (US)
Pages (from-to)869-882
Number of pages14
JournalJournal of Electronic Materials
Volume11
Issue number5
DOIs
StatePublished - Sep 1 1982

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Amorphous silicon
  • mass spectrometry
  • monochlorosilane
  • optical emission spectroscopy
  • photoconductivity
  • solar cells

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