Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology

Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen, Giovanni Crupi

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, a light-emitting diode in the ultra-violet range (UV-LED) with multiple-quantum wells (MQWs) of InGaN/GaN is designed and analyzed through Technology Computer-Aided Design (TCAD) simulations. The polarization effects in III-nitride heterojunction and the effects of graded composition in the electron blocking layer (EBL) are exploited to enhance the performance of the proposed UV-LED. It is observed that the effect of graded composition in the EBL helps to enhance the electrical and optical performance of the LED, thereby enabling the achievement of some promising results. The simulation-based results demonstrated that superior internal efficiency and an inferior leakage current are achieved by using a graded Al composition in the EBL rather than a uniform composition. The reported results also confirm the remarkable improvement of the light output power by 17% at ∼100 mA when using the graded composition and also show a reduction in series resistance leading to more current. Graded Al composition in the EBL results in the enhancement of electroluminescence spectra (i.e., an increase in the peak of the spectral density).

Original languageEnglish (US)
Article number015030
JournalEngineering Research Express
Volume4
Issue number1
DOIs
StatePublished - Mar 2022

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • III-nitride
  • UV-LED
  • deep-ultra-violet (DUV)
  • electron blocking layer (EBL)
  • multiple quantum wells (MQWs)
  • wide-band gap semiconductor devices

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