Effects of Post-growth Thermal Annealing on MBE-grown InAlGaAs/GaAs Quantum Dots

Riazul Arefin, Seunghyun Lee, Hyemin Jung, Jaedu Ha, Weicheng You, Arnob Ghosh, Md Saiful Islam Sumon, Jong Su Kim, Sanjay Krishna, Shamsul Arafin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quaternary InAlGaAs/GaAs quantum dots (QDs) were grown to achieve emission at <1 μm and the effects of post-growth thermal annealing on the optical and morphological properties were experimentally investigated. A QD density as high as > 5 × 1010 cm-2 and FWHM of 77 meV at 20 K are achieved for the as-grown QD ensemble. After the rapid thermal annealing (RTA) treatment, remarkable improvements in the optical properties of the QDs are observed as the integrated photoluminescence (PL) intensity improves by a factor of 2 and the FWHM reduces to 29 meV.

Original languageEnglish (US)
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
DOIs
StatePublished - 2022
Externally publishedYes
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: Jun 1 2022Jun 3 2022

Publication series

Name2022 Compound Semiconductor Week, CSW 2022

Conference

Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor
Period6/1/226/3/22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Keywords

  • Photoluminescence
  • Quantum dot
  • Rapid thermal annealing

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