EFFECTS OF RADIATION DAMAGE ON THE SILICON LATTICE.

Katherine A. Dumas, Lynn Lowry, O. Louis Russo

Research output: Contribution to journalConference articlepeer-review

Abstract

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields ( plus 0. 34%) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3. 46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Original languageEnglish (US)
Pages (from-to)654-658
Number of pages5
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Dec 1 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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