Abstract
Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields ( plus 0. 34%) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3. 46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 654-658 |
| Number of pages | 5 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| State | Published - 1987 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering