Abstract
Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of μc-Si:H i-layers. It has been demonstrated that p-layer seeding methods are preferable to i-layer seeding. While performance of μc-Si:H solar cells produced by i-layer seeding methods was usually limited by very low fill factors, μc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by p-layer seeding.
Original language | English (US) |
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Pages (from-to) | 84-88 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 483 |
Issue number | 1-2 |
DOIs | |
State | Published - Jul 1 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Keywords
- Chemical vapor deposition
- Nucleation
- Silicon
- Solar cells