We report on the effects of substrate temperature and RF power on the formation of aligned nanorod-like morphology in ZnO thin films. ZnO thin films were sputter-deposited in mixed Ar and N 2 gas ambient at various substrate temperatures and RF powers. We find that the substrate temperature plays more important role than RF power in the formation of ZnO nanorod-like morphology. At low substrate temperatures (below 300°nO nanorod-like morphology does not form regardless of RF powers. High RF power helps to promote the formation of aligned ZnO nanorod-like morphology. However, lower RF powers usually lead to ZnO films with better crystallinity at the same substrate temperatures in mixed Ar and N 2 gas ambient and therefore better photoelectrochemical response.
All Science Journal Classification (ASJC) codes
- Materials Science(all)