Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure

Guan Sun; Ruolin Chen; Pu Zhao; Yujie J. Ding; Hieu Nguyen; Zetian Mi

Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure

Guan Sun, Ruolin Chen, Pu Zhao, Yujie J. Ding, Hieu Nguyen, Zetian Mi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

Original language	English (US)
Title of host publication	2012 Conference on Lasers and Electro-Optics, CLEO 2012
State	Published - Dec 6 2012
Externally published	Yes
Event	2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012

Other

Other	2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/Territory	United States
City	San Jose, CA
Period	5/6/12 → 5/11/12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{1d71421b117648d59fa06b84ed0272b3,

title = "Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure",

abstract = "InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.",

author = "Guan Sun and Ruolin Chen and Pu Zhao and Ding, {Yujie J.} and Hieu Nguyen and Zetian Mi",

year = "2012",

month = dec,

day = "6",

language = "English (US)",

isbn = "9781467318396",

booktitle = "2012 Conference on Lasers and Electro-Optics, CLEO 2012",

note = "2012 Conference on Lasers and Electro-Optics, CLEO 2012 ; Conference date: 06-05-2012 Through 11-05-2012",

}

TY - GEN

T1 - Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure

AU - Sun, Guan

AU - Chen, Ruolin

AU - Zhao, Pu

AU - Ding, Yujie J.

AU - Nguyen, Hieu

AU - Mi, Zetian

PY - 2012/12/6

Y1 - 2012/12/6

N2 - InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

AB - InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

UR - http://www.scopus.com/inward/record.url?scp=84870376821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870376821&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870376821

SN - 9781467318396

BT - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

T2 - 2012 Conference on Lasers and Electro-Optics, CLEO 2012

Y2 - 6 May 2012 through 11 May 2012

ER -

Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure

Abstract

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All Science Journal Classification (ASJC) codes

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