Abstract
InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.
Original language | English (US) |
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Title of host publication | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 |
State | Published - Dec 6 2012 |
Externally published | Yes |
Event | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States Duration: May 6 2012 → May 11 2012 |
Other
Other | 2012 Conference on Lasers and Electro-Optics, CLEO 2012 |
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Country/Territory | United States |
City | San Jose, CA |
Period | 5/6/12 → 5/11/12 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials