Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure

Guan Sun, Ruolin Chen, Pu Zhao, Yujie J. Ding, Hieu Nguyen, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

Original languageEnglish (US)
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
StatePublished - Dec 6 2012
Externally publishedYes
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Other

Other2012 Conference on Lasers and Electro-Optics, CLEO 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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