@inproceedings{f7b72b3049224026b3c24d4389e164d5,
title = "Efficient terahertz generation from InGaN/GaN dot-in-a-wire nanostructure",
abstract = "InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.",
author = "Guan Sun and Ruolin Chen and Pu Zhao and Ding, {Yujie J.} and Nguyen, {Hieu P.T.} and Zetian Mi",
year = "2012",
doi = "10.1364/cleo_si.2012.cm2l.2",
language = "English (US)",
isbn = "9781557529435",
series = "CLEO: Science and Innovations, CLEO_SI 2012",
publisher = "Optical Society of America (OSA)",
pages = "CM2L.2",
booktitle = "CLEO",
note = "CLEO: Science and Innovations, CLEO_SI 2012 ; Conference date: 06-05-2012 Through 11-05-2012",
}