Efficient terahertz generation from InGaN/GaN dot-in-a-wire nanostructure

Guan Sun, Ruolin Chen, Pu Zhao, Yujie J. Ding, Hieu P.T. Nguyen, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2012
PublisherOptical Society of America (OSA)
PagesCM2L.2
ISBN (Print)9781557529435
DOIs
StatePublished - 2012
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2012 - San Jose, CA, United States
Duration: May 6 2012May 11 2012

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2012

Other

OtherCLEO: Science and Innovations, CLEO_SI 2012
CountryUnited States
CitySan Jose, CA
Period5/6/125/11/12

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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