Electrical and compositional properties of TaSi2 films

N. Ravindra, Lei Jin, Dentcho Ivanov, Vishal R. Mehta, Lamine M. Dieng, Guerman Popov, Oktay Gokce, James Grow, Anthony T. Fiory

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Tantalum silicide (TaSi2) thin films were sputter deposited on p- and n-type silicon substrates using ultrapure TaSi2 targets. The TaSi2/Si samples were annealed in nitrogen or forming gas or oxygen containing steam at temperatures in the range of 400-900°C. The sheet resistances of TaSi2/Si were measured by four-point probe before and after anneal. The structure of these films was investigated using x-ray diffraction (XRD) methods. It has been found that the sheet resistance decreases with the increase in annealing temperature and also with the increase in film thickness. X-ray diffraction patterns show changes in the morphological structure of the films. Oxidation characteristics of the films have been investigated in the temperature range of 400-900°C in oxygen containing steam ambient. The oxidation time ranged from 0.5 to 1.5 h. No oxide formation of the tantalum silicide films was observed in this investigation. This has been attributed to the high purity of TaSi2 sputter targets used in the preparation of the films.

Original languageEnglish (US)
Article number45
Pages (from-to)1074-1079
Number of pages6
JournalJournal of Electronic Materials
Volume31
Issue number10
DOIs
StatePublished - Jan 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Annealing
  • Oxidation
  • Sheet resistance
  • Sputtering
  • Tantalum silicide

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