Electrical and compositional properties of TaSi₂ films

Keyphrases

• Electrical Properties 100%
• Compositional Properties 100%
• TaSi2 100%
• Annealing 33%
• Steam 33%
• Sheet Resistance 33%
• Tantalum Silicide 33%
• Temperature Range 16%
• Silicon Substrate 16%
• Nitrogen Gas 16%
• Film Thickness 16%
• Morphological Structure 16%
• In Films 16%
• Sputtering Target 16%
• Annealing Temperature 16%
• Oxidation Characteristics 16%
• X-ray Diffraction Method 16%
• Sputter-deposited 16%
• Forming Gas 16%
• Four-point Probe 16%
• High Purity 16%
• Ultrapure 16%
• X-ray Diffraction Pattern 16%
• Oxidation Time 16%
• Oxide Formation 16%

Engineering

• Sheet Resistance 100%
• Thin Films 50%
• Temperature Range 50%
• Silicon Substrate 50%
• Annealing Temperature 50%
• Probe Point 50%
• Ray Diffraction Method 50%
• Sputter Target 50%
• X-Ray Diffraction Pattern 50%

Material Science

• Film 100%
• Oxidation Reaction 33%
• Tantalum 33%
• Silicide 33%
• Thin Films 16%
• Silicon 16%
• Oxide Compound 16%
• Film Thickness 16%
• X-Ray Diffraction 16%
• Morphology 16%
• Diffraction Pattern 16%