Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices

R. J. Martín-Palma; J. M. Martínez-Duart; L. Li; R. A. Levy

doi:10.1016/S0928-4931(01)00422-2

Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices

R. J. Martín-Palma, J. M. Martínez-Duart, L. Li, R. A. Levy

Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Porous silicon (PS)-based devices consisting of a metal/PS/Si/PS/metal structure were investigated in this study for potential use in photodiodes and solar cells. The PS layers act as front antireflective coating for short wavelength light and back surface reflector/diffuser for high wavelength radiation. The PS layers were formed by the chemical etching of crystalline silicon. Different metals such as Au/Cr, W, Ta, WTi, Cr and Ti were sputter deposited onto both PS surfaces. The electrical behavior of the resulting devices was determined to ascertain the most appropriate metallic contact for the development of these optoelectronic devices.

Original language	English (US)
Pages (from-to)	359-362
Number of pages	4
Journal	Materials Science and Engineering C
Volume	19
Issue number	1-2
DOIs	https://doi.org/10.1016/S0928-4931(01)00422-2
State	Published - Jan 2 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Metallic contact
Optoelectronic devices
Photodiode
Porous silicon
Series resistance
Solar cell

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10.1016/S0928-4931(01)00422-2

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title = "Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices",

abstract = "Porous silicon (PS)-based devices consisting of a metal/PS/Si/PS/metal structure were investigated in this study for potential use in photodiodes and solar cells. The PS layers act as front antireflective coating for short wavelength light and back surface reflector/diffuser for high wavelength radiation. The PS layers were formed by the chemical etching of crystalline silicon. Different metals such as Au/Cr, W, Ta, WTi, Cr and Ti were sputter deposited onto both PS surfaces. The electrical behavior of the resulting devices was determined to ascertain the most appropriate metallic contact for the development of these optoelectronic devices.",

keywords = "Metallic contact, Optoelectronic devices, Photodiode, Porous silicon, Series resistance, Solar cell",

author = "Mart{\'i}n-Palma, {R. J.} and Mart{\'i}nez-Duart, {J. M.} and L. Li and Levy, {R. A.}",

note = "Funding Information: The authors thank G. Hueso for his help with electrical characterization. This work was funded by the Ministerio de Asuntos Exteriores through the Comisi{\'o}n de Intercambio Cultural, Educativo y Cient{\'ı}fico entre Espa{\~n}a y los Estados Unidos de Am{\'e}rica, Research Project reference number GDA-541A-D-640. Partial funding was provided by the Ministerio de Ciencia y Tecnolog{\'ı}a through the Comisi{\'o}n Interministerial de Ciencia y Tecnolog{\'ı}a (CICYT), Research Project reference number MAT2000-0375-C02-01. ",

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doi = "10.1016/S0928-4931(01)00422-2",

language = "English (US)",

volume = "19",

pages = "359--362",

journal = "Materials Science and Engineering C",

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AU - Martín-Palma, R. J.

AU - Martínez-Duart, J. M.

AU - Li, L.

AU - Levy, R. A.

N1 - Funding Information: The authors thank G. Hueso for his help with electrical characterization. This work was funded by the Ministerio de Asuntos Exteriores through the Comisión de Intercambio Cultural, Educativo y Cientı́fico entre España y los Estados Unidos de América, Research Project reference number GDA-541A-D-640. Partial funding was provided by the Ministerio de Ciencia y Tecnologı́a through the Comisión Interministerial de Ciencia y Tecnologı́a (CICYT), Research Project reference number MAT2000-0375-C02-01.

PY - 2002/1/2

Y1 - 2002/1/2

N2 - Porous silicon (PS)-based devices consisting of a metal/PS/Si/PS/metal structure were investigated in this study for potential use in photodiodes and solar cells. The PS layers act as front antireflective coating for short wavelength light and back surface reflector/diffuser for high wavelength radiation. The PS layers were formed by the chemical etching of crystalline silicon. Different metals such as Au/Cr, W, Ta, WTi, Cr and Ti were sputter deposited onto both PS surfaces. The electrical behavior of the resulting devices was determined to ascertain the most appropriate metallic contact for the development of these optoelectronic devices.

AB - Porous silicon (PS)-based devices consisting of a metal/PS/Si/PS/metal structure were investigated in this study for potential use in photodiodes and solar cells. The PS layers act as front antireflective coating for short wavelength light and back surface reflector/diffuser for high wavelength radiation. The PS layers were formed by the chemical etching of crystalline silicon. Different metals such as Au/Cr, W, Ta, WTi, Cr and Ti were sputter deposited onto both PS surfaces. The electrical behavior of the resulting devices was determined to ascertain the most appropriate metallic contact for the development of these optoelectronic devices.

KW - Metallic contact

KW - Optoelectronic devices

KW - Photodiode

KW - Porous silicon

KW - Series resistance

KW - Solar cell

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SN - 0928-4931

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EP - 362

JO - Materials Science and Engineering C

JF - Materials Science and Engineering C

IS - 1-2

ER -

Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices

Abstract

All Science Journal Classification (ASJC) codes

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