Electrical characteristics of thermally evaporated HfO2

R. Garg; N. A. Chowdhury; M. Bhaskaran; P. K. Swain; D. Misra

doi:10.1149/1.1784212

Electrical characteristics of thermally evaporated HfO₂

R. Garg, N. A. Chowdhury, M. Bhaskaran, P. K. Swain, D. Misra

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The electrical characteristics of hafnium oxide (HfO₂) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO₂ as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10^-7 A/cm² at 1 V and reduced bulk oxide charges 1.61 × 10 ¹¹/cm² were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO₂ films deposited by standard thermal evaporation are suitable for MOS device applications.

Original language	English (US)
Pages (from-to)	F215-F219
Journal	Journal of the Electrochemical Society
Volume	151
Issue number	10
DOIs	https://doi.org/10.1149/1.1784212
State	Published - Nov 26 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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title = "Electrical characteristics of thermally evaporated HfO2",

abstract = "The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10-7 A/cm2 at 1 V and reduced bulk oxide charges 1.61 × 10 11/cm2 were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications.",

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T1 - Electrical characteristics of thermally evaporated HfO2

AU - Garg, R.

AU - Chowdhury, N. A.

AU - Bhaskaran, M.

AU - Swain, P. K.

AU - Misra, D.

PY - 2004/11/26

Y1 - 2004/11/26

N2 - The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10-7 A/cm2 at 1 V and reduced bulk oxide charges 1.61 × 10 11/cm2 were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications.

AB - The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10-7 A/cm2 at 1 V and reduced bulk oxide charges 1.61 × 10 11/cm2 were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications.

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Electrical characteristics of thermally evaporated HfO₂

Abstract

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