The electrical characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation of hafnium while adding oxygen at constant partial pressure during evaporation, were investigated for the first time. The dielectric constant as measured by the capacitance-voltage technique is estimated to be in the range of 18-25. Metal oxide semiconductor (MOS) capacitors using HfO2 as dielectric and annealed at 450°C show a hysteresis below 30 mV. A low leakage current density of <10-7 A/cm2 at 1 V and reduced bulk oxide charges 1.61 × 10 11/cm2 were also observed. The interface state density and low-temperature charge trapping behavior of these films were also investigated. Observed characteristics indicate that HfO2 films deposited by standard thermal evaporation are suitable for MOS device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry