Electrical characteristics of thermally evaporated HfO₂

Keyphrases

• Electrical Characteristics 100%
• HfO2 100%
• HfO2 Films 100%
• Thermal Evaporation 100%
• Low Temperature 50%
• Device Application 50%
• Dielectric 50%
• Annealing 50%
• Hysteresis 50%
• Dielectric Constant 50%
• Interface State Density 50%
• Charge Trapping 50%
• Capacitance-voltage 50%
• Oxide Charge 50%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 50%
• Leakage Current Density 50%
• Partial Pressure 50%
• Metal-oxide-semiconductor Devices 50%
• Hafnium 50%
• Hafnium Oxide 50%
• Low Leakage Current 50%
• Bulk Oxides 50%
• TRAP Activity 50%

Material Science

• Film 100%
• Electrical Property 100%
• Density 66%
• Oxide Compound 66%
• Metal Oxide 66%
• Oxide Semiconductor 66%
• Hafnium 66%
• Capacitance 33%
• Dielectric Material 33%
• Permittivity 33%
• Capacitor 33%
• Semiconductor Device 33%
• Charge Trapping 33%

Engineering

• Dielectrics 100%
• Metal Oxide Semiconductor 100%
• Low-Temperature 50%
• Semiconductor Device 50%
• Deposited Film 50%
• Partial Pressure 50%
• Interface State 50%