@inproceedings{0abe5b36eded4824a6481185d795c9c2,
title = "Electrical characterization of metal gate/high-k dielectrics on GaAs substrate",
abstract = "This paper investigates the electrical characteristics at low temperatures through C-V, I-V and conductance measurements to understand the interface trap density behavior of Ti-Au/HfO2/p-GaAs gate stack. Room temperature interface state density, At, estimated for as-deposited Ti-Au/HfO 2/GaAs capacitors was found to be 3.68×1011cm -2eV-1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. Devices subjected to a post-metal annealing at 90°C degraded further. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 fF/μm2 and 8.98 fF/μm2 for Be-Au/HfO2/GaAs and Ti-Au/HfO2/GaAs respectively at 1 MHz. After annealing, the value of capacitance density decreased significantly mainly because of reduction in dielectric constant.",
author = "V. Budhraja and D. Misra",
year = "2009",
doi = "10.1149/1.2981621",
language = "English (US)",
isbn = "9781566776516",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "455--461",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",
note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",
}