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Electrical damage to silicon devices due to reactive ion etching
D. Misra
, E. L. Heasell
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
15
Scopus citations
Overview
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Dive into the research topics of 'Electrical damage to silicon devices due to reactive ion etching'. Together they form a unique fingerprint.
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Physics & Astronomy
etching
55%
damage
52%
silicon
39%
ions
34%
recovery
30%
electric potential
29%
junction diodes
24%
Schottky diodes
19%
electric contacts
16%
high voltages
16%
capacitors
16%
diodes
13%
annealing
11%
defects
10%
Engineering & Materials Science
Reactive ion etching
100%
Silicon
58%
Etching
47%
Diodes
40%
Electric potential
30%
MOS capacitors
23%
Recovery
19%
Annealing
14%
Plasmas
13%
Defects
10%
Chemical Compounds
Etching
66%
Voltage
53%
Schottky Contact
29%
Point Group C∞V
29%
Ion
29%
Capacitor
18%
Annealing
14%
Plasma
11%
Amount
7%