Electrical degradation of AI/TiW/CoSi2 shallow junctions

S. A. Eshraghi; G. E. Georgiou; R. Uu; R. C. Beairsto; K. P. Cheung

Electrical degradation of AI/TiW/CoSi₂ shallow junctions

S. A. Eshraghi, G. E. Georgiou, R. Uu, R. C. Beairsto, K. P. Cheung

Research output: Contribution to journal › Article › peer-review

Abstract

TiW barrier properties have been investigated by electrical testing of shallow CoSt₂ junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5%Cu)/TiW/CoSi₂/Si structure. Based on the electrical data, it was demonstrated that 900 A of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450°C when TiW thickness was reduced to 450 A. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p⁺ n) are more vulnerable to barrier failure.

Original language	English (US)
Pages (from-to)	69-73
Number of pages	5
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	9
Issue number	1
State	Published - Jan 1991
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Electrical degradation of AI/TiW/CoSi2 shallow junctions",

abstract = "TiW barrier properties have been investigated by electrical testing of shallow CoSt2 junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5%Cu)/TiW/CoSi2/Si structure. Based on the electrical data, it was demonstrated that 900 A of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450°C when TiW thickness was reduced to 450 A. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p+ n) are more vulnerable to barrier failure.",

author = "Eshraghi, {S. A.} and Georgiou, {G. E.} and R. Uu and Beairsto, {R. C.} and Cheung, {K. P.}",

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AU - Eshraghi, S. A.

AU - Georgiou, G. E.

AU - Uu, R.

AU - Beairsto, R. C.

AU - Cheung, K. P.

PY - 1991/1

Y1 - 1991/1

N2 - TiW barrier properties have been investigated by electrical testing of shallow CoSt2 junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5%Cu)/TiW/CoSi2/Si structure. Based on the electrical data, it was demonstrated that 900 A of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450°C when TiW thickness was reduced to 450 A. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p+ n) are more vulnerable to barrier failure.

AB - TiW barrier properties have been investigated by electrical testing of shallow CoSt2 junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5%Cu)/TiW/CoSi2/Si structure. Based on the electrical data, it was demonstrated that 900 A of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450°C when TiW thickness was reduced to 450 A. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p+ n) are more vulnerable to barrier failure.

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Electrical degradation of AI/TiW/CoSi₂ shallow junctions

Abstract

All Science Journal Classification (ASJC) codes

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