Electrical degradation of AI/TiW/CoSi2 shallow junctions

S. A. Eshraghi, G. E. Georgiou, R. Uu, R. C. Beairsto, K. P. Cheung

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

TiW barrier properties have been investigated by electrical testing of shallow CoSt2 junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5%Cu)/TiW/CoSi2/Si structure. Based on the electrical data, it was demonstrated that 900 A of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450°C when TiW thickness was reduced to 450 A. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p+ n) are more vulnerable to barrier failure.

Original languageEnglish (US)
Pages (from-to)69-73
Number of pages5
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume9
Issue number1
StatePublished - Jan 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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