Electrical Properties of Ti/Au/SiO2/InP Structures

M. Patel, N. M. Ravindra

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Abstract

Experimental studies of the electrical properties of Ti/Au/SiO2/InP structures are presented here. The metal–insulator–semiconductor (MIS) capacitors were fabricated with oxide thicknesses of 195, 420, and 610 nm, respectively, on n‐type InP substrates, using rapid thermal chemical vapor deposition (RTCVD) techniques. The characterization techniques employed in these experiments were high frequency capacitance–voltage (C–U) and current–voltage (I–U). The electrical parameters obtained from the C–U and I–U measurements are discussed.

Original languageEnglish (US)
Pages (from-to)567-574
Number of pages8
Journalphysica status solidi (a)
Volume134
Issue number2
DOIs
StatePublished - Dec 16 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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