Electrical techniques for the characterization ot dielectric films

T. Kundu, R. Garg, N. A. Chowdhury, D. Misra

Research output: Contribution to journalReview articlepeer-review

8 Scopus citations

Abstract

Various electrical techniques for the purpose of characterization of dielectric films are discussed. Metal/insulator/semiconductor (MIS) structures are widely used for the characterization of dielectric materials. The dc voltage determines the bias condition while the ac voltage is necessary to measure the capacitance. The electrical equivalent circuit of a MIS capacitor is a series combination of a fixed voltage-independent gate oxide capacitance and a voltage-dependent semiconductor capacitance due to depletion. The leakage current through the dielectric material can be measured by varying the gate bias.

Original languageEnglish (US)
Pages (from-to)17-19
Number of pages3
JournalElectrochemical Society Interface
Volume14
Issue number3
StatePublished - Sep 1 2005

All Science Journal Classification (ASJC) codes

  • Electrochemistry

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