## Abstract

We report resonant spin-flip Raman scattering measurements in CdTe/Cd(Formula presented)Mg(Formula presented)Te single quantum wells with (Formula presented), and (Formula presented) as well as in Cd(Formula presented)Mg(Formula presented)Te alloys with (Formula presented), and (Formula presented). Effective (Formula presented) factors of electrons and heavy holes are measured as a function of the quantum well width (Formula presented) Å) and the angle of the magnetic field with respect to the growth axis. The electron (Formula presented) factors in quantum wells are between the values for bulk CdTe (Formula presented) and Cd(Formula presented)Mg(Formula presented)Te (Formula presented). We show that the change in the energy gap induced by the quantum confinement of the carriers provides the dominant contribution to the electron (Formula presented) factor in quantum wells. A large (Formula presented) factor anisotropy for conduction electrons is observed. It is shown that this anisotropy depends on the splitting between light- and heavy-hole states. The experimentally determined (Formula presented) factors are in good agreement with theoretical predictions.

Original language | English (US) |
---|---|

Pages (from-to) | 2114-2119 |

Number of pages | 6 |

Journal | Physical Review B - Condensed Matter and Materials Physics |

Volume | 56 |

Issue number | 4 |

DOIs | |

State | Published - Jan 1 1997 |

Externally published | Yes |

## All Science Journal Classification (ASJC) codes

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics