Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells

A. A. Kiselev, E. L. Ivchenko, A. A. Sirenko, T. Ruf, M. Cardona, D. R. Yakovlev, W. Ossau, A. Waag, G. Landwehr

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Effective g factors of electrons and heavy holes in CdTe/CdMgTe quantum wells have been measured with high accuracy as a function of the angle between the magnetic field and the structure growth axis. As a result, we have observed the electron g factor anisotropy in A2B6-based heterostructures. The dependences of the g factor tensor components on the quantum-well width and the solid solution composition have been calculated within the k -p method and compared with the available experimental data.

Original languageEnglish (US)
Pages (from-to)831-834
Number of pages4
JournalJournal of Crystal Growth
Volume184-185
DOIs
StatePublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • Electronic band structure
  • Quantum wells
  • Semiconductors
  • Spin-flip Raman scattering
  • Spin-orbit effects

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