Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells

A. A. Kiselev; E. L. Ivchenko; A. A. Sirenko; T. Ruf; M. Cardona; D. R. Yakovlev; W. Ossau; A. Waag; G. Landwehr

doi:10.1016/S0022-0248(98)80173-5

Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells

A. A. Kiselev, E. L. Ivchenko, A. A. Sirenko, T. Ruf, M. Cardona, D. R. Yakovlev, W. Ossau, A. Waag, G. Landwehr

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Effective g factors of electrons and heavy holes in CdTe/CdMgTe quantum wells have been measured with high accuracy as a function of the angle between the magnetic field and the structure growth axis. As a result, we have observed the electron g factor anisotropy in A₂B₆-based heterostructures. The dependences of the g factor tensor components on the quantum-well width and the solid solution composition have been calculated within the k -p method and compared with the available experimental data.

Original language	English (US)
Pages (from-to)	831-834
Number of pages	4
Journal	Journal of Crystal Growth
Volume	184-185
DOIs	https://doi.org/10.1016/S0022-0248(98)80173-5
State	Published - 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

Electronic band structure
Quantum wells
Semiconductors
Spin-flip Raman scattering
Spin-orbit effects

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10.1016/S0022-0248(98)80173-5

Cite this

@article{56432118477c4d7aa4949975b4b182e2,

title = "Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells",

abstract = "Effective g factors of electrons and heavy holes in CdTe/CdMgTe quantum wells have been measured with high accuracy as a function of the angle between the magnetic field and the structure growth axis. As a result, we have observed the electron g factor anisotropy in A2B6-based heterostructures. The dependences of the g factor tensor components on the quantum-well width and the solid solution composition have been calculated within the k -p method and compared with the available experimental data.",

keywords = "Electronic band structure, Quantum wells, Semiconductors, Spin-flip Raman scattering, Spin-orbit effects",

author = "Kiselev, \{A. A.\} and Ivchenko, \{E. L.\} and Sirenko, \{A. A.\} and T. Ruf and M. Cardona and Yakovlev, \{D. R.\} and W. Ossau and A. Waag and G. Landwehr",

note = "Funding Information: This work has been supported in part by INTAS (Grant 93-3657-Ext) and the Deutsche Forschun-gsgemeinschaft through SFB 410. A.A. Sirenko would like to thank the Alexander von Humboldt Foundation for financial support.",

year = "1998",

doi = "10.1016/S0022-0248(98)80173-5",

language = "English (US)",

volume = "184-185",

pages = "831--834",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells

AU - Kiselev, A. A.

AU - Ivchenko, E. L.

AU - Sirenko, A. A.

AU - Ruf, T.

AU - Cardona, M.

AU - Yakovlev, D. R.

AU - Ossau, W.

AU - Waag, A.

AU - Landwehr, G.

N1 - Funding Information: This work has been supported in part by INTAS (Grant 93-3657-Ext) and the Deutsche Forschun-gsgemeinschaft through SFB 410. A.A. Sirenko would like to thank the Alexander von Humboldt Foundation for financial support.

PY - 1998

Y1 - 1998

N2 - Effective g factors of electrons and heavy holes in CdTe/CdMgTe quantum wells have been measured with high accuracy as a function of the angle between the magnetic field and the structure growth axis. As a result, we have observed the electron g factor anisotropy in A2B6-based heterostructures. The dependences of the g factor tensor components on the quantum-well width and the solid solution composition have been calculated within the k -p method and compared with the available experimental data.

AB - Effective g factors of electrons and heavy holes in CdTe/CdMgTe quantum wells have been measured with high accuracy as a function of the angle between the magnetic field and the structure growth axis. As a result, we have observed the electron g factor anisotropy in A2B6-based heterostructures. The dependences of the g factor tensor components on the quantum-well width and the solid solution composition have been calculated within the k -p method and compared with the available experimental data.

KW - Electronic band structure

KW - Quantum wells

KW - Semiconductors

KW - Spin-flip Raman scattering

KW - Spin-orbit effects

UR - https://www.scopus.com/pages/publications/0001465413

UR - https://www.scopus.com/inward/citedby.url?scp=0001465413&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)80173-5

DO - 10.1016/S0022-0248(98)80173-5

M3 - Article

AN - SCOPUS:0001465413

SN - 0022-0248

VL - 184-185

SP - 831

EP - 834

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Electron and hole g factor anisotropy in CdTe/CdMgTe quantum wells

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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