@inproceedings{ed62aad789684baab2d57b014958dc96,
title = "Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes",
abstract = "Performance of the deep-ultraviolet LEDs is improved by replacing conventional p-doped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.",
author = "Barsha Jain and Velpula, {Ravi Teja} and Bui, {Ha Quoc Thang} and Moses Tumuna and Jeffrey Jude and Nguyen, {H. P.T.}",
note = "Publisher Copyright: {\textcopyright} 2020 OSA.; 2020 Conference on Lasers and Electro-Optics, CLEO 2020 ; Conference date: 10-05-2020 Through 15-05-2020",
year = "2020",
month = may,
language = "English (US)",
series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings",
address = "United States",
}