Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes

Barsha Jain; Ravi Teja Velpula; Ha Quoc Thang Bui; Moses Tumuna; Jeffrey Jude; H. P.T. Nguyen

doi:10.1364/CLEO_AT.2020.AF1I.3

Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes

Barsha Jain, Ravi Teja Velpula, Ha Quoc Thang Bui, Moses Tumuna, Jeffrey Jude, H. P.T. Nguyen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.

Original language	English (US)
Title of host publication	CLEO
Subtitle of host publication	Applications and Technology, CLEO_AT 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_AT.2020.AF1I.3
State	Published - 2020
Event	CLEO: Applications and Technology, CLEO_AT 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F181-CLEO-AT 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: Applications and Technology, CLEO_AT 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/CLEO_AT.2020.AF1I.3

Cite this

Jain, B., Velpula, R. T., Thang Bui, H. Q., Tumuna, M., Jude, J., & Nguyen, H. P. T. (2020). Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes. In CLEO: Applications and Technology, CLEO_AT 2020 Article AF1I.3 (Optics InfoBase Conference Papers; Vol. Part F181-CLEO-AT 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_AT.2020.AF1I.3

@inproceedings{739a9e906f13439e9c8d77772294ad68,

title = "Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes",

abstract = "Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.",

author = "Barsha Jain and Velpula, {Ravi Teja} and {Thang Bui}, {Ha Quoc} and Moses Tumuna and Jeffrey Jude and Nguyen, {H. P.T.}",

note = "Publisher Copyright: CLEO 2020 {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s).; CLEO: Applications and Technology, CLEO_AT 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

doi = "10.1364/CLEO_AT.2020.AF1I.3",

language = "English (US)",

isbn = "9781943580767",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "CLEO",

}

Jain, B, Velpula, RT, Thang Bui, HQ, Tumuna, M, Jude, J & Nguyen, HPT 2020, Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes. in CLEO: Applications and Technology, CLEO_AT 2020., AF1I.3, Optics InfoBase Conference Papers, vol. Part F181-CLEO-AT 2020, Optica Publishing Group (formerly OSA), CLEO: Applications and Technology, CLEO_AT 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_AT.2020.AF1I.3

Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes. / Jain, Barsha; Velpula, Ravi Teja; Thang Bui, Ha Quoc et al.
CLEO: Applications and Technology, CLEO_AT 2020. Optica Publishing Group (formerly OSA), 2020. AF1I.3 (Optics InfoBase Conference Papers; Vol. Part F181-CLEO-AT 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes

AU - Jain, Barsha

AU - Velpula, Ravi Teja

AU - Thang Bui, Ha Quoc

AU - Tumuna, Moses

AU - Jude, Jeffrey

AU - Nguyen, H. P.T.

PY - 2020

Y1 - 2020

N2 - Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.

AB - Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.

UR - http://www.scopus.com/inward/record.url?scp=85095130904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85095130904&partnerID=8YFLogxK

U2 - 10.1364/CLEO_AT.2020.AF1I.3

DO - 10.1364/CLEO_AT.2020.AF1I.3

M3 - Conference contribution

AN - SCOPUS:85095130904

SN - 9781943580767

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group (formerly OSA)

T2 - CLEO: Applications and Technology, CLEO_AT 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes

Abstract

Publication series

Conference

All Science Journal Classification (ASJC) codes

Access to Document

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