Electron blocking layer free AlGaN deep-ultraviolet light emitting diodes

Barsha Jain, Ravi Teja Velpula, Ha Quoc Thang Bui, Moses Tumuna, Jeffrey Jude, H. P.T. Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Performance of the deep-ultraviolet LEDs is improved by replacing conventional pdoped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2020
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
StatePublished - 2020
EventCLEO: Applications and Technology, CLEO_AT 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F181-CLEO-AT 2020

Conference

ConferenceCLEO: Applications and Technology, CLEO_AT 2020
CountryUnited States
CityWashington
Period5/10/205/15/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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