Electron time-of-flight measurements in porous silicon

Prasanna Rao; E. A. Schiff; L. Tsybeskov; P. M. Fauchet

Electron time-of-flight measurements in porous silicon

Prasanna Rao
, E. A. Schiff
, L. Tsybeskov
, P. M. Fauchet

Research output: Contribution to journal › Conference article › peer-review

Abstract

Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α ≈ 0.5. The range of mobilities is 10^-5 - 10^-4 cm²/Vs between 225 K and 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

Original language	English (US)
Pages (from-to)	613-618
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	452
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electron time-of-flight measurements in porous silicon",

abstract = "Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α ≈ 0.5. The range of mobilities is 10-5 - 10-4 cm2/Vs between 225 K and 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.",

author = "Prasanna Rao and Schiff, \{E. A.\} and L. Tsybeskov and Fauchet, \{P. M.\}",

year = "1997",

language = "English (US)",

volume = "452",

pages = "613--618",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Electron time-of-flight measurements in porous silicon

AU - Rao, Prasanna

AU - Schiff, E. A.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

PY - 1997

Y1 - 1997

N2 - Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α ≈ 0.5. The range of mobilities is 10-5 - 10-4 cm2/Vs between 225 K and 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

AB - Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α ≈ 0.5. The range of mobilities is 10-5 - 10-4 cm2/Vs between 225 K and 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

UR - https://www.scopus.com/pages/publications/0030714885

UR - https://www.scopus.com/pages/publications/0030714885#tab=citedBy

M3 - Conference article

AN - SCOPUS:0030714885

SN - 0272-9172

VL - 452

SP - 613

EP - 618

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Electron time-of-flight measurements in porous silicon

Abstract

All Science Journal Classification (ASJC) codes

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