Electron transit time enhancement in phtodetectors for high speed imaging

T. Kundu, R. K. Jarwal, D. Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)8890084782
StatePublished - 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: Sep 24 2002Sep 26 2002

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876


Other32nd European Solid-State Device Research Conference, ESSDERC 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


Dive into the research topics of 'Electron transit time enhancement in phtodetectors for high speed imaging'. Together they form a unique fingerprint.

Cite this