Electron transit time enhancement in phtodetectors for high speed imaging

T. Kundu; R. K. Jarwal; Durgamadhab Misra

doi:10.1109/ESSDERC.2002.195015

Electron transit time enhancement in phtodetectors for high speed imaging

T. Kundu, R. K. Jarwal, Durgamadhab Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.

Original language	English (US)
Title of host publication	European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	651-654
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.195015
State	Published - Jan 1 2002
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: Sep 24 2002 → Sep 26 2002

Other

Other	32nd European Solid-State Device Research Conference, ESSDERC 2002
Country/Territory	Italy
City	Firenze
Period	9/24/02 → 9/26/02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/ESSDERC.2002.195015

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@inproceedings{f2f53c6be94d48878521122da7852461,

title = "Electron transit time enhancement in phtodetectors for high speed imaging",

abstract = "to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.",

author = "T. Kundu and Jarwal, {R. K.} and Durgamadhab Misra",

year = "2002",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2002.195015",

language = "English (US)",

pages = "651--654",

booktitle = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",

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TY - GEN

T1 - Electron transit time enhancement in phtodetectors for high speed imaging

AU - Kundu, T.

AU - Jarwal, R. K.

AU - Misra, Durgamadhab

PY - 2002/1/1

Y1 - 2002/1/1

N2 - to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.

AB - to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.

UR - http://www.scopus.com/inward/record.url?scp=84907690193&partnerID=8YFLogxK

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U2 - 10.1109/ESSDERC.2002.195015

DO - 10.1109/ESSDERC.2002.195015

M3 - Conference contribution

AN - SCOPUS:84907690193

SP - 651

EP - 654

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

Electron transit time enhancement in phtodetectors for high speed imaging

Abstract

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