Abstract
to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.
Original language | English (US) |
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Title of host publication | European Solid-State Device Research Conference |
Publisher | IEEE Computer Society |
Pages | 651-654 |
Number of pages | 4 |
ISBN (Electronic) | 8890084782 |
DOIs | |
State | Published - Jan 1 2002 |
Event | 32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: Sep 24 2002 → Sep 26 2002 |
Other
Other | 32nd European Solid-State Device Research Conference, ESSDERC 2002 |
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Country/Territory | Italy |
City | Firenze |
Period | 9/24/02 → 9/26/02 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality