Electronic polarizability as a function of the penn gap in semiconductors

N. M. Ravindra; V. K. Srivastava

doi:10.1016/0020-0891(80)90009-3

Electronic polarizability as a function of the penn gap in semiconductors

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	67-69
Number of pages	3
Journal	Infrared Physics
Volume	20
Issue number	1
DOIs	https://doi.org/10.1016/0020-0891(80)90009-3
State	Published - Jan 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering

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10.1016/0020-0891(80)90009-3

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@article{133fc885bcfa4c1fb875081a69efc187,

title = "Electronic polarizability as a function of the penn gap in semiconductors",

author = "Ravindra, {N. M.} and Srivastava, {V. K.}",

note = "Funding Information: thankfully acknowledges the financial support of the Univer-",

year = "1980",

month = jan,

doi = "10.1016/0020-0891(80)90009-3",

language = "English (US)",

volume = "20",

pages = "67--69",

journal = "Infrared Physics",

issn = "0020-0891",

publisher = "Elsevier",

number = "1",

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AU - Srivastava, V. K.

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U2 - 10.1016/0020-0891(80)90009-3

DO - 10.1016/0020-0891(80)90009-3

M3 - Article

AN - SCOPUS:0040850100

SN - 0020-0891

VL - 20

SP - 67

EP - 69

JO - Infrared Physics

JF - Infrared Physics

IS - 1

ER -

Electronic polarizability as a function of the penn gap in semiconductors

All Science Journal Classification (ASJC) codes

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