Abstract
In three-dimensional (3-D) integrated magnetic sensor de- sign, cross-axis sensitivities among the various components of the magnetic field have been a problem. In this brief it is demonstrated that complete elimination of the cross-sensitivity is possible if a 3-D magnetic sensor is implemented in BiCMOS technology. A compact device structure is designed to detect the three components of the magnetic field vector by placing a split-collector magnetotransistor and a split-drain MOSFET adjacent to each other. Measured sensitivities of the sensor are presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 622-624 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 41 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1994 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering