Emissivity measurements and modeling of silicon-related materials: An overview

N. M. Ravindra; B. Sopori; O. H. Gokce; S. X. Cheng; A. Shenoy; L. Jin; S. Abedrabbo; W. Chen; Y. Zhang

doi:10.1023/A:1012869710173

Emissivity measurements and modeling of silicon-related materials: An overview

N. M. Ravindra, B. Sopori, O. H. Gokce, S. X. Cheng, A. Shenoy, L. Jin, S. Abedrabbo, W. Chen, Y. Zhang

Physics

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104 Scopus citations

Abstract

An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

Original language	English (US)
Pages (from-to)	1593-1611
Number of pages	19
Journal	International Journal of Thermophysics
Volume	22
Issue number	5
DOIs	https://doi.org/10.1023/A:1012869710173
State	Published - 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

Keywords

Coatings
Concentration
Doping concentration
Emissivity
Silicon
Surface roughness
Temperature
Wavelength

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10.1023/A:1012869710173

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title = "Emissivity measurements and modeling of silicon-related materials: An overview",

abstract = "An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.",

keywords = "Coatings, Concentration, Doping concentration, Emissivity, Silicon, Surface roughness, Temperature, Wavelength",

author = "Ravindra, {N. M.} and B. Sopori and Gokce, {O. H.} and Cheng, {S. X.} and A. Shenoy and L. Jin and S. Abedrabbo and W. Chen and Y. Zhang",

note = "Funding Information: This work has been partially supported in various stages by grants from DARPA, DOD, SEMATECH, and the U.S. Department of Energy.",

year = "2001",

doi = "10.1023/A:1012869710173",

language = "English (US)",

volume = "22",

pages = "1593--1611",

journal = "International Journal of Thermophysics",

issn = "0195-928X",

publisher = "Springer New York",

number = "5",

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TY - JOUR

T1 - Emissivity measurements and modeling of silicon-related materials

T2 - An overview

AU - Ravindra, N. M.

AU - Sopori, B.

AU - Gokce, O. H.

AU - Cheng, S. X.

AU - Shenoy, A.

AU - Jin, L.

AU - Abedrabbo, S.

AU - Chen, W.

AU - Zhang, Y.

N1 - Funding Information: This work has been partially supported in various stages by grants from DARPA, DOD, SEMATECH, and the U.S. Department of Energy.

PY - 2001

Y1 - 2001

N2 - An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

AB - An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

KW - Coatings

KW - Concentration

KW - Doping concentration

KW - Emissivity

KW - Silicon

KW - Surface roughness

KW - Temperature

KW - Wavelength

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DO - 10.1023/A:1012869710173

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SP - 1593

EP - 1611

JO - International Journal of Thermophysics

JF - International Journal of Thermophysics

IS - 5

ER -

Emissivity measurements and modeling of silicon-related materials: An overview

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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