Emissivity measurements and modeling of silicon-related materials: An overview

N. M. Ravindra, B. Sopori, O. H. Gokce, S. X. Cheng, A. Shenoy, L. Jin, S. Abedrabbo, W. Chen, Y. Zhang

Research output: Contribution to journalArticlepeer-review

76 Scopus citations

Abstract

An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

Original languageEnglish (US)
Pages (from-to)1593-1611
Number of pages19
JournalInternational Journal of Thermophysics
Volume22
Issue number5
DOIs
StatePublished - 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Keywords

  • Coatings
  • Concentration
  • Doping concentration
  • Emissivity
  • Silicon
  • Surface roughness
  • Temperature
  • Wavelength

Fingerprint Dive into the research topics of 'Emissivity measurements and modeling of silicon-related materials: An overview'. Together they form a unique fingerprint.

Cite this