Emissivity studies on polycrystalline silicon and a-Si/SiO2/Si

W. Chen, M. Oh, S. Abedrabbo, F. M. Tong, W. Schmidt, S. Narayanan, B. Sopori, N. M. Ravindra

Research output: Contribution to journalConference articlepeer-review

Abstract

Experimental studies of the room temperature emissivity of polysilicon are reported here. These measurements have been performed using a spectral emissometer operating in the wavelength range of 0.8-20 μm. The measured optical properties are deconvoluted to yield the wavelength dependent refractive indices and extinction coefficient of polysilicon. An in house developed computer program, OPCalc, is deployed to perform these calculations. Experimental results of the temperature dependent emissivity of a-Si/SiO2/Si/SiO2/a-Si, fabricated on single side polished silicon substrates, in the temperature range of 300 to 1100 K have been reported here. These measurements are performed for a-Si thickness of 2100 A. Comparisons of the temperature dependent radiative properties of these structures between the front and the back show that the contribution of surface roughness to emissivity is negligible. The exposure of these a-Si coated structures to high temperatures in open environment has caused these surfaces to oxidize. Interpretations have been sought by comparisons of the experimental data with those on SiO2/Si structures.

Original languageEnglish (US)
Pages (from-to)81-89
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume470
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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