Enabling Normally-Off in Situ Computing with a Magneto-Electric FET-Based SRAM Design

Keyphrases

• Normally-off 100%
• Field-effect Transistors 100%
• Magnetoelectric 100%
• In Situ Computing 100%
• SRAM Design 100%
• Electric Field Effect 66%
• Magnetoelectric Fields 66%
• Energy Consumption Reduction 33%
• Low Power Consumption 33%
• Non-volatile 33%
• Robust Performance 33%
• High-speed Switching 33%
• Post-CMOS 33%
• Evaluation Results 33%
• Computing Approach 33%
• Operand 33%
• Design Characteristics 33%
• Novel Processing 33%
• Memory Application 33%
• Idle State 33%
• Non-volatility 33%
• Single Clock 33%
• Logic Application 33%
• Architecture Evaluation 33%
• Edge Applications 33%
• Binary Convolutional Neural Network 33%
• Convolutional Neural Network Accelerator 33%
• Boolean Logic Operation 33%
• Static Power Consumption 33%
• SRAM Cell 33%
• Compelling Design 33%
• Bitline Computing 33%
• SRAM Architecture 33%

Computer Science

• Effect Transistor 100%
• Energy Consumption 33%
• Power Consumption 33%
• Low Power Consumption 33%
• Nonvolatile 33%
• Evaluation Result 33%
• Clock Cycle 33%
• Convolutional Neural Network 33%
• Static Power 33%
• Application Logic 33%
• Application Memory 33%
• Architecture Evaluation 33%
• Boolean Logic 33%
• Bitline 33%

Engineering

• Field-Effect Transistor 100%
• Field Effect Transistor 100%
• Electric Field 66%
• Electric Power Utilization 33%
• Low Power Consumption 33%
• Reducing Energy Consumption 33%
• Convolutional Neural Network 33%
• Backups 33%
• Clock Cycle 33%
• Boolean Logic 33%