Endurance improvement of Ge2Sb2Te5-based phase change memory

Chieh Fang Chen, A. Schrott, M. H. Lee, S. Raoux, Y. H. Shih, M. Breitwisch, F. H. Baumann, E. K. Lai, T. M. Shaw, P. Flaitz, R. Cheek, E. A. Joseph, S. H. Chen, B. Rajendran, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Scopus citations

Abstract

We describe a cycling failure mode in Ge2Sb2Te 5-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles.

Original languageEnglish (US)
Title of host publication2009 IEEE International Memory Workshop, IMW '09
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 IEEE International Memory Workshop, IMW '09 - Monterey, CA, United States
Duration: May 10 2009May 14 2009

Publication series

Name2009 IEEE International Memory Workshop, IMW '09

Other

Other2009 IEEE International Memory Workshop, IMW '09
CountryUnited States
CityMonterey, CA
Period5/10/095/14/09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Keywords

  • Dopant
  • GeSbTe
  • Phase change memory
  • Void

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