Endurance improvement of Ge2Sb2Te5-based phase change memory

Chieh Fang Chen; A. Schrott; M. H. Lee; S. Raoux; Y. H. Shih; M. Breitwisch; F. H. Baumann; E. K. Lai; T. M. Shaw; P. Flaitz; R. Cheek; E. A. Joseph; S. H. Chen; B. Rajendran; H. L. Lung; C. Lam

doi:10.1109/IMW.2009.5090589

Endurance improvement of Ge₂Sb₂Te₅-based phase change memory

Chieh Fang Chen, A. Schrott, M. H. Lee, S. Raoux, Y. H. Shih, M. Breitwisch, F. H. Baumann, E. K. Lai, T. M. Shaw, P. Flaitz, R. Cheek, E. A. Joseph, S. H. Chen, B. Rajendran, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

37 Scopus citations

Abstract

We describe a cycling failure mode in Ge₂Sb₂Te ₅-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 10⁹ cycles.

Original language	English (US)
Title of host publication	2009 IEEE International Memory Workshop, IMW '09
DOIs	https://doi.org/10.1109/IMW.2009.5090589
State	Published - 2009
Externally published	Yes
Event	2009 IEEE International Memory Workshop, IMW '09 - Monterey, CA, United States Duration: May 10 2009 → May 14 2009

Publication series

Name	2009 IEEE International Memory Workshop, IMW '09

Other

Other	2009 IEEE International Memory Workshop, IMW '09
Country/Territory	United States
City	Monterey, CA
Period	5/10/09 → 5/14/09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

Dopant
GeSbTe
Phase change memory
Void

Access to Document

10.1109/IMW.2009.5090589

Cite this

Chen, C. F., Schrott, A., Lee, M. H., Raoux, S., Shih, Y. H., Breitwisch, M., Baumann, F. H., Lai, E. K., Shaw, T. M., Flaitz, P., Cheek, R., Joseph, E. A., Chen, S. H., Rajendran, B., Lung, H. L., & Lam, C. (2009). Endurance improvement of Ge₂Sb₂Te₅-based phase change memory. In 2009 IEEE International Memory Workshop, IMW '09 Article 5090589 (2009 IEEE International Memory Workshop, IMW '09). https://doi.org/10.1109/IMW.2009.5090589

@inproceedings{f9701e5366f343699d3fa1a390a6b7a1,

title = "Endurance improvement of Ge2Sb2Te5-based phase change memory",

abstract = "We describe a cycling failure mode in Ge2Sb2Te 5-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles.",

keywords = "Dopant, GeSbTe, Phase change memory, Void",

author = "Chen, {Chieh Fang} and A. Schrott and Lee, {M. H.} and S. Raoux and Shih, {Y. H.} and M. Breitwisch and Baumann, {F. H.} and Lai, {E. K.} and Shaw, {T. M.} and P. Flaitz and R. Cheek and Joseph, {E. A.} and Chen, {S. H.} and B. Rajendran and Lung, {H. L.} and C. Lam",

year = "2009",

doi = "10.1109/IMW.2009.5090589",

language = "English (US)",

isbn = "9781424437610",

series = "2009 IEEE International Memory Workshop, IMW '09",

booktitle = "2009 IEEE International Memory Workshop, IMW '09",

}

Chen, CF, Schrott, A, Lee, MH, Raoux, S, Shih, YH, Breitwisch, M, Baumann, FH, Lai, EK, Shaw, TM, Flaitz, P, Cheek, R, Joseph, EA, Chen, SH, Rajendran, B, Lung, HL & Lam, C 2009, Endurance improvement of Ge₂Sb₂Te₅-based phase change memory. in 2009 IEEE International Memory Workshop, IMW '09., 5090589, 2009 IEEE International Memory Workshop, IMW '09, 2009 IEEE International Memory Workshop, IMW '09, Monterey, CA, United States, 5/10/09. https://doi.org/10.1109/IMW.2009.5090589

TY - GEN

T1 - Endurance improvement of Ge2Sb2Te5-based phase change memory

AU - Chen, Chieh Fang

AU - Schrott, A.

AU - Lee, M. H.

AU - Raoux, S.

AU - Shih, Y. H.

AU - Breitwisch, M.

AU - Baumann, F. H.

AU - Lai, E. K.

AU - Shaw, T. M.

AU - Flaitz, P.

AU - Cheek, R.

AU - Joseph, E. A.

AU - Chen, S. H.

AU - Rajendran, B.

AU - Lung, H. L.

AU - Lam, C.

PY - 2009

Y1 - 2009

N2 - We describe a cycling failure mode in Ge2Sb2Te 5-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles.

AB - We describe a cycling failure mode in Ge2Sb2Te 5-based Phase Change Memory, based on density difference of GST in different phases and the SET/RESET thermal operations. Voids that develop and merge with each other within GST programming volume after cycling eventually lead to cell failure. By adding suitable amount of doping material into GST, we are able to delay this void formation process and to significantly improve the cell endurance to more than 109 cycles.

KW - Dopant

KW - GeSbTe

KW - Phase change memory

KW - Void

UR - http://www.scopus.com/inward/record.url?scp=70349987900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349987900&partnerID=8YFLogxK

U2 - 10.1109/IMW.2009.5090589

DO - 10.1109/IMW.2009.5090589

M3 - Conference contribution

AN - SCOPUS:70349987900

SN - 9781424437610

T3 - 2009 IEEE International Memory Workshop, IMW '09

BT - 2009 IEEE International Memory Workshop, IMW '09

T2 - 2009 IEEE International Memory Workshop, IMW '09

Y2 - 10 May 2009 through 14 May 2009

ER -