Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy

Ashfiqua T. Connie, Hieu P.T. Nguyen, Sharif M. Sadaf, Ishiang Shih, Zetian Mi

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The functional properties, such as color rendering index (CRI) and correlated color temperature (CCT) of nanowire white light emitting diodes (LEDs), have been studied. The nanowire LEDs can generate broad spectrum white light, and by controlling the growth conditions, it is easy to tailor the spectrum. This is a significant advantage over phosphor converted or nanocrystal based white light sources since it is difficult to modulate the spectrum while maintaining high efficiency using these conventional methods. The authors demonstrated that the InGaN/(Al)GaN dot-in-a-wire heterostructure LEDs can generate high CRI values of 94-98 in both warm and cool white regions. Furthermore, the generated light demonstrates relatively stable CCT, CRI, and Commission Internationale d'Eclairage coordinates at different injection currents.

Original languageEnglish (US)
Article number02C113
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number2
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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