Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

Sudhakar Shet; Kwang Soon Ahn; N. M. Ravindra; Yanfa Yan; Todd Deutsch; John Turner; M. Al-Jassim

Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

Sudhakar Shet, Kwang Soon Ahn, N. M. Ravindra, Yanfa Yan, Todd Deutsch, John Turner, M. Al-Jassim

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

Original language	English (US)
Title of host publication	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Pages	277-286
Number of pages	10
State	Published - 2009
Event	Materials Science and Technology Conference and Exhibition 2009, MS and T'09 - Pittsburgh, PA, United States Duration: Oct 25 2009 → Oct 29 2009

Publication series

Name	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Volume	1

Other

Other	Materials Science and Technology Conference and Exhibition 2009, MS and T'09
Country/Territory	United States
City	Pittsburgh, PA
Period	10/25/09 → 10/29/09

All Science Journal Classification (ASJC) codes

General Materials Science

Keywords

Al incorporation
Bandgap reduction
Co-doping
F-doped tin oxide
Ga incorporation
Photoelectrochemical
Post-deposition annealing
Sputtering

Cite this

Shet, S., Ahn, K. S., Ravindra, N. M., Yan, Y., Deutsch, T., Turner, J., & Al-Jassim, M. (2009). Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. In Materials Science and Technology Conference and Exhibition 2009, MS and T'09 (pp. 277-286). (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).

@inproceedings{a3ce1a5f7bde46dd8ad5d840a94a8ef0,

title = "Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films",

abstract = "In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.",

keywords = "Al incorporation, Bandgap reduction, Co-doping, F-doped tin oxide, Ga incorporation, Photoelectrochemical, Post-deposition annealing, Sputtering",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Ravindra, {N. M.} and Yanfa Yan and Todd Deutsch and John Turner and M. Al-Jassim",

year = "2009",

language = "English (US)",

isbn = "9781615676361",

series = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09",

pages = "277--286",

booktitle = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09",

note = "Materials Science and Technology Conference and Exhibition 2009, MS and T'09 ; Conference date: 25-10-2009 Through 29-10-2009",

}

Shet, S, Ahn, KS, Ravindra, NM, Yan, Y, Deutsch, T, Turner, J & Al-Jassim, M 2009, Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. in Materials Science and Technology Conference and Exhibition 2009, MS and T'09. Materials Science and Technology Conference and Exhibition 2009, MS and T'09, vol. 1, pp. 277-286, Materials Science and Technology Conference and Exhibition 2009, MS and T'09, Pittsburgh, PA, United States, 10/25/09.

Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films. / Shet, Sudhakar; Ahn, Kwang Soon; Ravindra, N. M. et al.
Materials Science and Technology Conference and Exhibition 2009, MS and T'09. 2009. p. 277-286 (Materials Science and Technology Conference and Exhibition 2009, MS and T'09; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Ravindra, N. M.

AU - Yan, Yanfa

AU - Deutsch, Todd

AU - Turner, John

AU - Al-Jassim, M.

PY - 2009

Y1 - 2009

N2 - In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

AB - In this study, co-doped ZnO:(Ga,N) and ZnO:(Al,N) films were deposited by co-sputtering at room temperature and 100°C, followed by post-annealing at 500°C. Nitrogen-doped ZnO films, ZnO:N(1) and ZnO:N(2), were deposited at substrate temperatures of 500°C and 100°C, respectively. We found that the ZnO:(Ga,N) and ZnO:(Al,N) films exhibited greatly enhanced crystallinity compared to ZnO:N(1) and ZnO:N(2) films doped with pure N. Furthermore, the ZnO:(Ga,N) and ZnO:(Al,N) films showed much higher N-incorporation than ZnO:N films grown at 100°C and 500°C with pure N doping. As a result, the ZnO:(Ga,N) and ZnO:(Al,N) films showed significantly higher photocurrents than ZnO:N(1) and ZnO:N(2) doped by N alone at both high and low temperatures. Our results suggest that the passive co-doping approach is a preferred method for synthesizing metal oxides with both high crystallinity and impurity incorporation, which should help to improve their photoelectrochemical performance.

KW - Al incorporation

KW - Bandgap reduction

KW - Co-doping

KW - F-doped tin oxide

KW - Ga incorporation

KW - Photoelectrochemical

KW - Post-deposition annealing

KW - Sputtering

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UR - http://www.scopus.com/inward/citedby.url?scp=77649119080&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77649119080

SN - 9781615676361

T3 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

SP - 277

EP - 286

BT - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

T2 - Materials Science and Technology Conference and Exhibition 2009, MS and T'09

Y2 - 25 October 2009 through 29 October 2009

ER -

Enhanced crystallinity and photoelectrochemical response of (Ga,N) and (Al,N) co-doped ZnO films

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Keywords

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